By Jin Lu

Ningbo-based PN Junction Semiconductor has developed a copper-interconnect packaging process for silicon carbide (SiC) power devices, intended for use in electric vehicles, AI computing and energy storage.

Founded in 2018, the company has developed more than 100 power-device products. Its SiC MOSFETs are already used by Chinese automakers and Tier 1 suppliers in data centers, 5G base stations, energy storage systems and EV charging equipment.

The company's latest process replaces the conventional aluminum interconnect structure with thick copper metallization on the surface of 8-inch SiC wafers. According to the company, the technology increases current density from about 400 A/sq cm to more than 600 A/sq cm, while reducing parasitic inductance to below 2 nanohenries and cutting switching losses by about 40%.

PN Junction Semiconductor is also developing embedded PCB power modules that integrate SiC chips directly into multilayer circuit boards. The design shortens electrical paths, improves heat dissipation and allows for more compact power systems.

The company expects sales of its AI-related products to reach 300 million to 400 million yuan ($44 million to $59 million) by 2027, more than 100 times current levels.

Founder Huang Xing said the company will continue to develop advanced packaging technologies and strengthen cooperation across the SiC supply chain, from wafer manufacturing and power modules to end-use applications.